Effect of substrate growth temperatures on H diffusion in hydrogenated Si ∕ Si homoepitaxial structures grown by molecular beam epitaxy
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چکیده
منابع مشابه
Sb-surfactant-mediated growth of Si/Si12yCy superlattices by molecular-beam epitaxy
Si/Si0.97C0.03 superlattices were grown on Si~001! substrates by molecular beam epitaxy ~MBE! to study the use of Sb as a surfactant during Si12yCy growth. In situ reflection high energy electron diffraction ~RHEED! shows that while carbon easily disrupts the two-dimensional growth of homoepitaxial Si, such disruption is suppressed for layers grown on Sb-terminated Si~001! surfaces. Cross-secti...
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In Si crystal growth by molecular-beam epitaxy (MBE) at low temperatures there is known to be an epitaxial thickness: an initially crystalline regime before the deposited film becomes amorphous. The predominant impurity in MBE is hydrogen, but the role of background H in low-temperature MBE has not previously been assessed. Here the effect of deliberate dosing of the Si surface with atomic H du...
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Since many years, the contribution of vacancies (V ) and self-interstitials (I ) to silicon (Si) self-diffusion is a matter of debate. Native defects and their interaction among themselves and with foreign atoms influence the processes taking place during device fabrication, starting with the growth of Si single crystals and ending with doping of nanosized electronic devices. Considering this r...
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تاریخ انتشار 2014